2.765

2022影响因子

(CJCR)

  • 中文核心
  • EI
  • 中国科技核心
  • Scopus
  • CSCD
  • 英国科学文摘

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

忆阻及其应用研究综述

王小平 沈轶 吴计生 孙军伟 李薇

王小平, 沈轶, 吴计生, 孙军伟, 李薇. 忆阻及其应用研究综述. 自动化学报, 2013, 39(8): 1170-1184. doi: 10.3724/SP.J.1004.2013.01170
引用本文: 王小平, 沈轶, 吴计生, 孙军伟, 李薇. 忆阻及其应用研究综述. 自动化学报, 2013, 39(8): 1170-1184. doi: 10.3724/SP.J.1004.2013.01170
WANG Xiao-Ping, SHEN Yi, WU Ji-Sheng, SUN Jun-Wei, LI Wei. Review on Memristor and Its Applications. ACTA AUTOMATICA SINICA, 2013, 39(8): 1170-1184. doi: 10.3724/SP.J.1004.2013.01170
Citation: WANG Xiao-Ping, SHEN Yi, WU Ji-Sheng, SUN Jun-Wei, LI Wei. Review on Memristor and Its Applications. ACTA AUTOMATICA SINICA, 2013, 39(8): 1170-1184. doi: 10.3724/SP.J.1004.2013.01170

忆阻及其应用研究综述

doi: 10.3724/SP.J.1004.2013.01170
基金项目: 

国家自然科学基金(61134012, 11271146);中央高校基本科研业务费(HUST: 2013TS126);武汉市科技计划 (2013010501010117)资助

详细信息
    作者简介:

    王小平 华中科技大学自动化学院教授.2003 年获得华中科技大学控制科学与工程系博士学位. 主要研究方向为系统建模与仿真. E-mail:wangxiaoping@mail.hust.edu.cn

Review on Memristor and Its Applications

Funds: 

Supported by National Natural Science Foundation of China (61134012, 11271146), the Fundamental Research Funds for the Central Universities (HUST: 2013TS126), and Wuhan Science and Technology Plan (2013010501010117)

  • 摘要: 忆阻由蔡少棠教授从对称性角度预言提出,自惠普实验室2008年制作出第一款忆阻开始, 其已成为自动化等相关领域最热门研究方向之一. 本文回顾了忆阻的起源,探讨了忆阻的分类及其制造技术,分析了忆阻的多个数学模型和仿真模型以及仿真模型的实现方法, 总结了忆阻在人工神经网络、保密通信、存储器、模拟电路、人工智能计算机、生物行为模拟等方面的研究现状, 并对其应用前景进行展望.
  • [1] Chua L O. Memristor—the missing circuit element. IEEE Transactions on Circuit Theory, 1971, 18(5): 507-519
    [2] Strukov D B, Snider G S, Stewart D R, Williams R S. The missing memristor found. Nature, 2008, 453(7191): 80-83
    [3] Tour J M, He T. Electronics: the fourth element. Nature, 2008, 453(7191): 42-43
    [4] Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S. "Memristive" switches enable "stateful" logic operations via material implication. Nature, 2010, 464(7290): 873-876
    [5] Mathur N D. The fourth circuit element. Nature, 2008, 455(7217): E13
    [6] Chua L O, Kang S M. Memristive devices and systems. Proceedings of the IEEE, 1976, 64(2): 209-223
    [7] Qu Xiang, Xu Wen-Ting, Xiao Qing-Hua, Liu Bin, Yan Zhi-Rui, Zhou Qi-Gang. Research progress on resistive random access memory materials. Materials Review, 2012, 26(6): 31-35 (曲翔, 徐文婷, 肖清华, 刘斌, 闫志瑞, 周旗钢. 忆阻器材料的研究进展. 材料导报, 2012, 26(6): 31-35)
    [8] Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N, Williams R S. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology, 2009, 20(21): 215201
    [9] Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S. High switching endurance in TaOx memristive devices. Applied Physics Letters, 2010, 97(23): 232102
    [10] Chang T, Jo S H, Kim K H, Sheridan P, Gaba S, Lu W. Synaptic behaviors and modeling of a metal oxide memristive device. Applied Physics A, 2011, 102(4): 857-863
    [11] Choi D, Lee D, Sim H, Chang M, Hwang H. Reversible resistive switching of SrTiO x thin films for nonvolatile memory applications. Applied Physics Letters, 2006, 88(8): 082904
    [12] Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G. Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3-δ films. Applied Physics Letters, 2010, 97(11): 112101-1-112101-3
    [13] Oblea A S, Timilsina A, Moore D, Campbell K A. Silver chalcogenide based memristor devices. In: Proceedings of the 2010 International Joint Conference on Neural Networks. Barcelona, Spain: IEEE, 2010. 1-3
    [14] Scott J C, Bozano L D. Nonvolatile memory elements based on organic materials. Advanced Materials, 2007, 19(11): 1452-1463
    [15] Kang E T, Neoh K G, Tan K L. Polyaniline: a polymer with many interesting intrinsic redox states. Progress in Polymer Science, 1998, 23(2): 277-324
    [16] Stewart D R, Ohlberg D A A, Beck P A, Chen Y, Williams R S. Molecule-independent electrical switching in Pt/organic monolayer/Ti devices. Nano Letters, 2004, 4(1): 133-136
    [17] Lai Y S, Tu C H, Kwong D L, Chen J S. Bistable resistance switching of poly (N-vinylcarbazole) films for nonvolatile memory applications. Applied Physics Letters, 2005, 87(12): 122101
    [18] Ling Q D, Liaw D J, Zhu C X, Chan D S H, Kang E T, Neoh K G. Polymer electronic memories: materials, devices and mechanisms. Progress in Polymer Science, 2008, 33(10): 917-978
    [19] Buot F A, Rajagopal A K. Binary information storage at zero bias in quantum-well diodes. Journal of Applied Physics, 1994, 76(9): 5552-5560
    [20] Chang L L, Esaki L, Tsu R. Resonant tunneling in semiconductor double barriers. Applied Physics Letters, 1974, 24(12): 593-595
    [21] Kim D J, Lu H, Ryu S, Bark C W, Eom C B, Tsymbal E Y, Gruverman A. Ferroelectric tunnel memristor. Nano Letters, 2012, 12(11): 5697-5702
    [22] Hickmott T W. Low-frequency negative resistance in thin anodic oxide films. Journal of Applied Physics, 1962, 33(9): 2669-2682
    [23] Sawa A. Resistive switching in transition metal oxides. Materials Today, 2008, 11(6): 28-36
    [24] Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology, 2008, 3(7): 429-433
    [25] Yang J J, Strachan J P, Miao F, Zhang M X, Pickett M D, Yi W, Ohlberg D A A, Medeiros-Ribeiro G, Williams R S. Metal/TiO2 interfaces for memristive switches. Applied Physics A, 2011, 102(4): 785-789
    [26] Wu J, McCreery R L. Solid-state electrochemistry in molecule/TiO2 molecular heterojunctions as the basis of the TiO2 "Memristor". Journal of the Electrochemical Society, 2009, 156(1): 29-37
    [27] Wang X B, Chen Y R, Xi H W, Li H, Dimitrov D. Spintronic memristor through spin-torque-induced magnetization motion. IEEE Electron Device Letters, 2009, 30(3): 294-297
    [28] Pershin Y V, Di Ventra M. Spin memristive systems: spin memory effects in semiconductor spintronics. Physical Review B, 2008, 78(11): 113309
    [29] Widrow B. An Adaptive "Adaline" Neuron Using Chemical "Memistors". Technical Report 1553-2, Stanford Electronics Laboratories, Stanford University, Stanford, California, 1960
    [30] Widrow B, Pierce W H, Angell J B. Birth, life, and death in microelectronic systems. IRE Transactions on Military Electronics, 1961, MIL-5(3): 191-201
    [31] Xia Q F, Pickett M D, Yang J J, Li X M, Wu W, Medeiros-Ribeiro G, Williams R S. Two-and three-terminal resistive switches: nanometer-scale memristors and memistors. Advanced Functional Materials, 2011, 21(14): 2660-2665
    [32] Driscoll T, Kim H T, Chae B G, Di Ventra M, Basov D N. Phase-transition driven memristive system. Applied Physics Letters, 2009, 95(4): 043503
    [33] Chua L. Resistance switching memories are memristors. Applied Physics A, 2011, 102(4): 765-783
    [34] Lan Hong-Bo, Ding Yu-Cheng, Liu Hong-Zhong, Lu Bing-Heng. Review of template fabrication for nanoimprint lithography. Journal of Mechanical Engineering, 2009, 45(6): 1-13(兰红波, 丁玉成, 刘红忠, 卢秉恒. 纳米压印光刻模具制作技术研究进展及其发展趋势. 机械工程学报, 2009, 45(6): 1-13)
    [35] Xia Q F, Yang J J, Wu W, Li X M, Williams R S. Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. Nano Letters, 2010, 10(8): 2909-2914
    [36] Choi B J, Jeong D S, Kim S K, Rohde C, Choi S, Oh J H, Kim H J, Hwang C S, Szot K, Waser R, Reichenberg B, Tiedke S. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. Journal of Applied Physics, 2005, 98(3): 033715
    [37] Kim S K, Kim W D, Kim K M, Hwang C S, Jeong J. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 ℃ by atomic-layer deposition. Applied Physics Letters, 2004, 85(18): 4112-4114
    [38] Di Ventra M, Pershin Y V, Chua L O. Circuit elements with memory: memristors, memcapacitors, and meminductors. Proceedings of the IEEE, 2009, 97(10): 1717-1724
    [39] Drakakis E M, Yaliraki S N, Barahona M. Memristors and bernoulli dynamics. In: Proceedings of the 12th International Workshop on Cellular Nanoscale Networks and Their Applications. London, UK: IEEE, 2010. 1-6
    [40] Drakakis E M, Payne A J. A bernoulli cell-based investigation of the non-linear dynamics in log-domain structures. Analog Integrated Circuits and Signal Processing, 2000, 22: 127-146
    [41] Georgiou P S, Barahona M, Yaliraki S N, Drakakis E M. Device properties of Bernoulli memristors. Proceedings of the IEEE, 2012, 100(6): 1938-1950
    [42] Linares-Barranco B, Serrano-Gotarredona T. Memristance can explain spike-time-dependent-plasticity in neural synapses. Nature Precedings, 2009, hdl:10101/npre.2009. 3010.1
    [43] Joglekar Y N, Wolf S J. The elusive memristor: properties of basic electrical circuits. European Journal of Physics, 2009, 30: 661-675
    [44] Biolek Z, Biolek D, Biolková V. SPICE model of memristor with nonlinear dopant drift. Radio Engineering, 2009, 18(2): 210-214
    [45] Benderli S, Wey T A. On SPICE macromodelling of TiO2 memristors. Electronics Letters, 2009, 45(7): 377-379
    [46] Prodromakis T, Boon P P, Papavassiliou C, Toumazou C. A versatile memristor model with nonlinear dopant kinetics. IEEE Transactions on Electron Devices, 2011, 58(9): 3099-3105
    [47] Buscarino A, Fortuna L, Frasca M, Valentina G L. A chaotic circuit based on Hewlett-Packard memristor. Chaos, 2012, 22(2): 023136
    [48] Kavehei O, Iqbal A, Kim Y S, Eshraghiam K, Al-Sarawi S F, Abbott D. The fourth element: characteristics, modelling and electromagnetic theory of the memristor. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2010, 466(2120): 2175-2202
    [49] Itoh M, Chua L O. Memristor oscillators. International Journal of Bifurcation and Chaos, 2008, 18(11): 3183-3206
    [50] Muthuswamy B, Kokate P P. Memristor-based chaotic circuits. IEEE Technical Review, 2009, 26(6): 415-426
    [51] Botta V A, Néspoli C, Messias M. Mathematical analysis of a third-order memristor-based Chua's oscillator. TEMA Congresso Nacionalde Matematica Apllicada Computacional, 2011, 12(2): 91-99
    [52] Petras I. Fractional-order memristor-based Chua's circuit. IEEE Transactions on Circuits and Systems II: Express Briefs, 2010, 57(12): 975-979
    [53] Wang L D, Drakakis E, Duan S K, He P F, Liao X F. Memristor model and its application for chaos generation. International Journal of Bifurcation and Chaos, 2012, 22(8): 1250205
    [54] Muthuswamy B, Kokate P P. Memristor-based chaotic circuits. IEEE Technical Review, 2009, 26(6): 417-429
    [55] Wen S P, Zeng Z G, Huang T W. Adaptive synchronization of memristor-based Chua's circuits. Physics Letters A, 2012, 376(44): 2775-2780
    [56] Wen S P, Shen Y, Zeng Z G, Cai Y X. Chaos analysis and control in a chaotic circuit with a PWL memristor. In: Proceedings of the 3rd International Conference on Information Science and Engineering. Nanjing, China: IEEE, 2011. 1030-1033
    [57] Sun J W, Shen Y, Zhang G D. Transmission projective synchronization of multi-systems with non-delayed and delayed coupling via impulsive control. Chaos, 2012, 22(4): 043107
    [58] Muthuswamy B. Implementing memristor based chaotic circuits. International Journal of Bifurcation and Chaos, 2010, 20(5): 1335-1350
    [59] Bao Bo-Cheng, Wang Qi-Hong, Xu Jian-Ping. On memristor based five-order chaotic circuit. Journal of Circuits and Systems, 2011, 16(2): 66-70 (包伯成, 王其红, 许建平. 基于忆阻元件的五阶混沌电路研究. 电路与系统学报, 2011, 16(2): 66-70)
    [60] Bao Bo-Cheng, Shi Guo-Dong, Xu Jian-Ping, Liu Zhong, Pai Sai-Hu. Dynamical analysis of two memristor chaotic oscillators. Scientia Sinica (Technologica), 2011, 41(8): 1135-1142 (包伯成, 史国栋, 许建平, 刘中, 潘赛虎. 含两个忆阻器混沌电路的动力学分析. 中国科学: 技术科学, 2011, 41(8): 1135-1142)
    [61] Bao B C, Ma Z H, Xu J P, Liu Z, Xu Q. A simple memristor chaotic circuit with complex dynamics. International Journal of Bifurcation and Chaos, 2011, 21(9): 2629-2645
    [62] Song Y F, Shen Y, Yi C. Chaos control of a memristor-based Chua's oscillator via backstepping method. In: Proceedings of the 3rd International Conference on Information Science and Engineering. Nanjing, China: IEEE, 2011. 1081-1084
    [63] Iu H H C, Yu D S, Fitch A L, Sreeram V, Chen H. Controlling chaos in a memristor based circuit using a Twin-T notch filter. IEEE Transactions on Circuits and Systems-I: Regular Papers, 2011, 58(6): 1337-1344
    [64] Ishaq A A, Srinivasan K, Murali K, Lakshmanan M. Observation of chaotic beats in a driven memristive Chua's circuit. International Journal of Bifurcation and Chaos, 2011, 21(3): 737-757
    [65] Bao B C, Xu J P, Liu Z. Initial state dependent dynamical behaviors in a memristor based chaotic circuit. Chinese Physics Letters, 2010, 27(7): 070504
    [66] Donato C, Giuseppe G. On the simplest fractional-order memristor-based chaotic system. Nonlinear Dynamics, 2012, 70 (2): 1185-1197
    [67] Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X. The mathematical model and properties of memristor with border constraint. Acta Physica Sinica, 2010, 59(9): 6673-6680
    [68] Corinto F, Ascoli A. Memristor based-elements for chaotic circuits. Nonlinear Theory and Its Applications, 2012, 3(3): 336-356
    [69] Hu Xiao-Fang, Duan Shu-Kai, Wang Li-Dan, Liao Xiao-Feng. Memristive crossbar array with applications in image processing. Science China: Information Sciences, 2011, 41(4): 500-512 (胡小方, 段书凯, 王丽丹, 廖晓峰. 忆阻器交叉阵列及在图像处理中的应用. 中国科学: 信息科学, 2011, 41(4): 500-512)
    [70] Zaplatilek K. Memristor modeling in Matlab® & Simulink®. In: Proceedings of the 5th European Conference on European Computing Conference. Stevens Point, Wisconsin, USA: World Scientific and Engineering Academy and Society (WSEAS), 2011. 62-67
    [71] Yi W, Perner F, Qureshi M S, Abdalla H, Pickett M D, Yang J J, Zhang M X M, Medeiros-Ribeiro G, Williams R S. Feedback write scheme for memristive switching devices. Applied Physics A, 2011, 102(4): 973-982
    [72] Eshraghian K, Cho K R, Kavehei O, Kang S K, Abbott D, Kang S M S. Memristor MOS content addressable memory (MCAM): hybrid architecture for future high performance search engines. IEEE Transactions on Very Large Scale Integration (VLSI) System, 2011, 19(8): 1407-1417
    [73] Duan Shu-Kai, Hu Xiao-Fang, Wang Li-Dan, Li Chuan-Dong, Mazumder P. Memristor-based RRAM with applications. Science China: Information Sciences, 2012, 42(6): 754-769 (段书凯, 胡小方, 王丽丹, 李传东, Mazumder P. 忆阻器阻变随机存取存储器及其在信息存储中的应用. 中国科学: 信息科学, 2012, 42(6): 754-769)
    [74] Hu Xiao-Fang. Research on Memristor Based on Ovalatile Memory[Master dissertation], Southwest University, China, 2012 (胡小方. 基于忆阻器的非易失性存储器研究[硕士学位论文], 西南大学, 中国, 2012)
    [75] Tian Xiao-Bo. Research on Circuit Characteristics and Application of Memristor[Master dissertation], National University of Defense Technology, China, 2009 (田晓波. 忆阻器电路特性与应用研究[硕士学位论文], 国防科学技术大学, 中国, 2009)
    [76] Batas D, Fiedler H. A memristor SPICE implementation and a new approach for magnetic flux-controlled memristor modeling. IEEE Transactions on Nanotechnology, 2011, 10(2): 250-255
    [77] Idongesit E E, Mazumder P. Self-controlled writing and erasing in a memristor crossbar memory. IEEE Transactions on Nanotechnology, 2011, 10(6): 1454-1463
    [78] Liu Mei-Qin. Delayed standard neural network model and its application. Acta Automatica Sinica, 2005, 31(5): 750-758 (刘妹琴. 时滞标准神经网络模型及其应用. 自动化学报, 2005, 31(5): 750-758)
    [79] Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W. Nanoscale memristor device as synapse in neuromorphic systems. Nano Letters, 2010, 10(4): 1297-1301
    [80] Pershin Y V, Di Ventra M. Experimental demonstration of associative memory with memristive neural networks. Neural Networks, 2010, 23(7): 881-886
    [81] Wang H, Li H, Pino R E. Memristor-based synapse design and training scheme for neuromorphic computing architecture. In: Proceedings of the 2012 International Joint Conference on Neural Networks. Brisbane, Australia: IEEE, 2012. 1-5
    [82] Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X M, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Letters, 2009, 9(10): 3640-3645
    [83] Gao S Y, Duan S K, Wang L D. RTDs based cellular neural/nonlinear networks with applications in image processing. Advanced Materials Research, 2012, 403-408: 2289-2292
    [84] Hu J, Wang J. Global uniform asymptotic stability of memristor-based recurrent neural networks with time delays. In: Proceedings of the 2010 International Joint Conference on Neural Networks. Barcelona, Spain: IEEE, 2010. 1-8
    [85] Filippov A F. Differential equations with discontinuous right-hand side. Matematicheskii Sbornik, 1960, 51(93): 1, 99-128
    [86] Aubin J P, Frankowska H. Set-valued Analysis. Berlin: Springer-Verlag, 2009. 20-25
    [87] Aubin J P, Cellina A. Differential Inclusions. New York: Springer-Verlag, 1984. 30-35
    [88] Wu A L, Zhang J, Zeng Z G. Dynamic behaviors of a class of memristor-based hopfield networks. Physics Letters A, 2011, 375(15): 1661-1665
    [89] Wen S P, Zeng Z G. Dynamics analysis of a class of memristor-based recurrent networks with time-varying delays in the presence of strong external stimuli. Neural Processing Letters, 2012, 35(1): 47-59
    [90] Zhang G D, Shen Y, Sun J W. Global exponential stability of a class of memristor-based recurrent neural networks with time-varying delays. Neurocomputing, 2012, 97: 149-154
    [91] Wen S P, Zeng Z G, Huang T W. Exponential stability analysis of memristor-based recurrent neural networks with time-varying delays. Neurocomputing, 2012, 97: 233-240
    [92] Wu A L, Zeng Z G. Dynamic behaviors of memristor-based recurrent neural networks with time-varying delays. Neural Networks, 2012, 36: 1-10
    [93] Bao G, Zeng Z G. Multistability of periodic delayed recurrent neural network with memristors. Neural Computing and Applications, 2013, DOI: 10.1007/s00521-012-0954-x
    [94] Wu A L, Zeng Z G, Zhu X S, Zhang J. Exponential synchronization of memristor-based recurrent neural networks with time delays. Neurocomputing, 2011, 74(17): 3043-3050
    [95] Wu A L, Wen S P, Zeng Z G. Synchronization control of a class of memristor-based recurrent neural networks. Information Sciences, 2012, 183(1): 106-116
    [96] Chai Tian-You, Zhang Ya-Jun. Nonlinear adaptive switching control method based on unmodeled dynamics compensation. Acta Automatica Sinica, 2011, 37(7): 773-786 (柴天佑, 张亚军. 基于未建模动态补偿的非线性自适应切换控制方法. 自动化学报, 2011, 37(7): 773-786)
    [97] Adhikari S P, Yang C J, Kimand H, Chua L O. Memristor bridge synapse-based neural network and its learning. IEEE Transactions on Neural Networks and Learning Systems, 2012, 23(9): 1426-1435
    [98] Bao G, Zeng Z G. Analysis and design of associative memories based on recurrent neural network with discontinuous activation functions. Neurocomputing, 2012, 77(1): 101-107
    [99] Shin S, Kim K, Kang S M S. Memristor-based fine resolution programmable resistance and its applications. In: Proceedings of the 2009 International Conference on Communications, Circuits and Systems. Milpitas, CA: IEEE, 2009. 948-951
    [100] Chen Shan-Ben, Wu Lin, Zhang Quan, Zhang Fu-En. A self learning artificial neural network control of uncertain objects. Acta Automatica Sinica, 1997, 23(1): 112-115 (陈善本, 吴林, 张铨, 张福恩. 不确定对象的人工神经网络自学习控制方法. 自动化学报, 1997, 23(1): 112-115)
    [101] Wu A L, Zeng Z G. Anti-synchronization control of a class of memristive recurrent neural networks. Communications in Nonlinear Science and Numerical Simulation, 2013, 18(2): 373-385
    [102] Wang Wei-Ling. Study on Memristor Chaos and Its Application in Speech Secure Communication System[Master dissertation], Hangzhou Dianzi University, China, 2012 (王伟玲. 忆阻器混沌及其在语音保密通信系统中的应用研究[硕士学位论文], 杭州电子科技大学, 中国, 2012)
    [103] Bao B C, Liu Z, Xu J P. Steady periodic memristor oscillator with transient chaotic behaviours. Electronics Letter, 2010, 46(3): 228-230
    [104] Bao Bo-Cheng, Liu Zhong, Xu Jian-Ping. Dynamical analysis of memristor chaotic oscillator. Acta Physica Sinica, 2010, 59(6): 3785-3793 (包伯成, 刘中, 许建平. 忆阻混沌振荡器的动力学分析. 物理学报, 2010, 59(6): 3785-3793)
    [105] Bao Bo-Cheng. Chaotic Dynamical Systems: Extensionand Analysis[Ph.D. dissertation], Nanjing Universityof Science and Technology, China, 2010(包伯成. 混沌动力学系统延拓与分析[博士学位论文], 南京理工大学, 中国, 2010)
    [106] Bao B C, Liu Z, Xu J P. Transient chaos in smooth memristor oscillator. Chinese Physics B, 2010, 19(3): 030510
    [107] Wang Li-Dan, Duan Shu-Kai. Random Bit Generator Based on Chaotic Oscillator and Its Application, China Patent 201110051856.8., September 2011 (王丽丹, 段书凯. 混沌振荡器及其作为随机比特发生器的应用. 中国专利201110051856.8., 2011年9月)
    [108] Cong Qiu-Bo. The latest MRAM storage capacity upgrade to 16Mb. EDN China, 2010, 17(7): 12 (丛秋波. 最新MRAM存储能力提升到16Mb. 电子设计技术, 2010, 17(7): 12)
    [109] Cuniberti G, Richter K, Fagas G. Introducing Molecular Electronics. Berlin, Heidelberg: Springer, 2005. 447-477
    [110] Dong C, Chen D M, Haruehanroengra S, Wang W. 3-D nFPGA: a reconfigurable architecture for 3-D CMOS/nanoma-terial hybrid digital circuits. IEEE Transactions on Circuits and Systems I: Regular Papers, 2007, 54(11): 2489-2501
    [111] Rose G S, Cabe A C, Gergel-Hackett N, Majumdar N, Stan M R, Bean J C, Harriott L R, Yao Y X, Tour J M. Designing CMOS/molecular memories while considering device parameter variations. ACM Journal of Emerging Technologies in Computing Systems, 2007, 3(1): 1-22
    [112] Strukov D B, Likharev K K. CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices. Nanotechnology, 2005, 16(6): 888-900
    [113] Hu Shu-Kai. Database Application Oriented Memristor Memory Technology[Master dissertation], National University of Defense Technology, China, 2011 (胡舒凯. 面向数据库应用的忆阻器存储器技术[硕士学位论文], 国防科学技术大学, 中国, 2011)
    [114] Gergel-Hackett N, Hamadani B, Dunlap B, Suehle J, Richter C, Hacker C, Gundlach D. A flexible solution-processed memristor. IEEE Electron Device Letters, 2009, 30(7): 706-708
    [115] Jo S H, Kim K H, Lu W. Programmable resistance switching in nanoscale two-terminal devices. Nano Letters, 2009, 9(1): 496-500
    [116] Cao X, Li X M, Gao X D, Yu W D, Liu X J, Zhang Y W, Chen L D, Cheng X H. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications. Journal of Applied Physics, 2009, 106(7): 073723-1-073723-5
    [117] Mustafa J, Rüdiger A, Waser R. Comparison of three different architectures for active resistive memories. AEU-International Journal of Electronics and Communications, 2007, 61(5): 345-352
    [118] Yakopcic C, Taha T M, Subramanyam G, Pino R E, Rogers S. Analysis of a memristor based 1T1M crossbar architecture. In: Proceedings of the 2011 International Joint Conference on Neural Networks. California, USA: San Jose, 2011. 3243-3427
    [119] Qureshi M S, Pickett M, Miao F, Strachan J P. CMOS interface circuits for reading and writing memristor crossbar array. In: Proceedings of the 2011 IEEE International Symposium on Circuits and Systems (ISCAS). Rio de Janeiro, Brazil: IEEE, 2011. 2954-2957
    [120] Bavandpour M, Shouraki S B, Soleimani H, Ahmadi A, Makhlooghpour A A. Simulation of memristor crossbar structure on GPU platform. In: Proceedings of the 20th Iranian Conference on Electrical Engineering (ICEE2012). Tehran, Iran: IEEE, 2012. 178-183
    [121] Zidan M A, Fahmy H A H, Hussain M M, Salama K N. Memristor-based memory: the sneak paths problem and solutions. Microelectronics Journal, 2012, 44(2): 176-183
    [122] Ho Y, Huang G M, Li P. Dynamical properties and design analysis for nonvolatile memristor memories. IEEE Transactions on Circuits and Systems-I: Regular Papers, 2011, 58(4): 724-736
    [123] Lehtonen E, Laiho M. Stateful implication logic with memristors. In: Proceedings of the 2009 IEEE/ACM International Symposium on Nanoscale Architectures. Washington, DC. USA: IEEE, 2009. 33-36
    [124] Wang Le-Yi. Research progress of the memristor and its application foreground. Electronic Components and Materials, 2010, 29(12): 71-74 (王乐毅. 忆阻器研究进展及应用前景. 电子元件与材料, 2010, 29(12): 71-74)
    [125] Cong J, Xiao B J. MrFPGA: a novel FPGA architecture with memristor-based reconfiguration. In: Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures. San Diego, CA: IEEE, 2011. 1-8
    [126] Witrisal K. A memristor-based multicarrier UWB receiver. In: Proceedings of the 2009 IEEE International Conference on Ultra-Wideband. Vancouver, BC, Canada: IEEE, 2009. 679-683
    [127] Pershin Y V, Di Ventra M. Practical approach to programmable analog circuits with memristors. IEEE Transactions on Circuits and Systems-I: Regular Papers, 2010, 57(8): 1857-1864
    [128] Zhang Da-Peng. A survey of the development of computers for pattern recognition and image processing (PRIP). Acta Automatica Sinica, 1989, 15(1): 84-93 (张大鹏. 模式识别与图象处理(PRIP)计算机发展评述. 自动化学报, 1989, 15(1): 84-93)
    [129] Pershin Y V, La Fontaine S, Di Ventra M. Memristive model of amoeba learning. Physical Review E, 2009, 80(2): 021926-1-021926-6
    [130] Williams S. How we found the missing memristor. IEEE Spectrum, 2008, 45(12): 28-35
  • 加载中
计量
  • 文章访问数:  2598
  • HTML全文浏览量:  93
  • PDF下载量:  3940
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-12-31
  • 修回日期:  2013-06-06
  • 刊出日期:  2013-08-20

目录

    /

    返回文章
    返回