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Stability Analysis for Memristive Recurrent Neural Network and Its Application to Associative Memory

Bao Gang Chen Yuanyuan Wen Siyu Lai Zhicen

鲍刚, 陈媛媛, 温思雨, 赖陟岑. 忆阻递归神经网络稳定性分析及其在联想记忆中的应用. 自动化学报, 2017, 43(12): 2244-2252. doi: 10.16383/j.aas.2017.e170103
引用本文: 鲍刚, 陈媛媛, 温思雨, 赖陟岑. 忆阻递归神经网络稳定性分析及其在联想记忆中的应用. 自动化学报, 2017, 43(12): 2244-2252. doi: 10.16383/j.aas.2017.e170103
Bao Gang, Chen Yuanyuan, Wen Siyu, Lai Zhicen. Stability Analysis for Memristive Recurrent Neural Network and Its Application to Associative Memory. ACTA AUTOMATICA SINICA, 2017, 43(12): 2244-2252. doi: 10.16383/j.aas.2017.e170103
Citation: Bao Gang, Chen Yuanyuan, Wen Siyu, Lai Zhicen. Stability Analysis for Memristive Recurrent Neural Network and Its Application to Associative Memory. ACTA AUTOMATICA SINICA, 2017, 43(12): 2244-2252. doi: 10.16383/j.aas.2017.e170103

忆阻递归神经网络稳定性分析及其在联想记忆中的应用

doi: 10.16383/j.aas.2017.e170103
基金项目: 

Hubei Science and Technology Support Program 2015BAA106

Hubei Key Laboratory of Cascaded Hydropower Stations Operation and Control Program 2013KJX12

China Three Gorges University Science Foundation KJ2013B020

the National Natural Science Foundation of China 61125303

the Program for Changjiang Scholars and Innovative Research Team in University of China IRT1245

the Program for Science and Technology in Wuhan, China 2014010101010004

Stability Analysis for Memristive Recurrent Neural Network and Its Application to Associative Memory

Funds: 

Hubei Science and Technology Support Program 2015BAA106

Hubei Key Laboratory of Cascaded Hydropower Stations Operation and Control Program 2013KJX12

China Three Gorges University Science Foundation KJ2013B020

the National Natural Science Foundation of China 61125303

the Program for Changjiang Scholars and Innovative Research Team in University of China IRT1245

the Program for Science and Technology in Wuhan, China 2014010101010004

More Information
    Author Bio:

    Yuanyuan Chen received the B.S.degree from the College of Science and Technology, China Three Gorges University in 2016.Now she is a postgraduate student and pursuing for M.S.degree at the School of Electrical Engineering and New Energies, China Three Gorges University.Her current research interests include microgrid optimization scheduling and stability analysis.E-mail:pretty.yuanzi@qq.com

    Siyu Wen received the B.S.degree in water resources and hydropower engineering from the College of Science and Technology, China Three Gorges University in 2016.Now, she is currently working toward the M.S.degree at the School of Electrical Engineering and New Energies, China Three Gorges University.Her current research interests include hydropower dispatching and unit commitment optimization.E-mail:215341796@qq.com

    Zhicen Lai received the B.S.degree in electrical engineering and its automation (focus on transmission line), China Three Gorges University in 2016.She is currently working toward the M.S.degree at the School of Electrical Engineering and New Energies, China Three Gorges University, Yichang, China.Her current research interests include microgrid control and stability analysis.E-mail:2512991452@qq.com

    Corresponding author: Gang Bao received the B.S.degree in mathematics from Hubei Normal University, Huangshi, China, the M.S.degree in applied mathematics from Beijing University of Technology, Beijing, China, in 2000 and 2004, the Ph.D.degree from the Department of Control Science and Engineering, Huazhong University of Science and Technology, respectively.His research interests include memristor, stability analysis of nonlinear systems, and association memory.Corresponding author of this paper.E-mail:hustgangbao@ctgu.edu.cn
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    Recommended by Associate Editor Zhanshan Wang
  • Fig.  1  The curve of $(v(t), i(t))$ under voltage sources with different amplitudes. The applied voltage source is $v(t)=v_0\sin(\omega t)$, $v_0=1.5, 1, 0.15, 0.01$ V, $\omega=2\pi$ rad/s and the other parameters are $s(t_0)=0.1$, $t_0=0$ s, $R_{\rm on}=100 \Omega $, $r=160$, $D=10^{-6} \mbox{cm}$, $\mu_V=10^{-10} \mbox{cm}^2/\mbox{sV}$. From four subplots, there is a threshold voltage existing for one memristor.

    Fig.  2  Transient behaviors of $x_{1}(t)$ of MRNN (26).

    Fig.  3  Transient behaviors of $x_{2}(t)$ of MRNN (26).

    Fig.  4  Phase plot of $x_{1}(t)$ and $x_{2}(t)$ of MRNN (26).

    Fig.  5  Transient behaviors of $x_{1}(t)$ and $x_{2}(t)$ of MRNN (27)

    Fig.  6  Three letters "I, L, U" and number "7" being presented by gray map.

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